1 file number 3624.2 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright ?intersil corporation 1999 HS-2700RH low power, high performance radiation hardened operational ampli?r HS-2700RH is radiation hardened internally compensated operational ampli?rs which employ dielectric isolation to achieve excellent dc and dynamic performance with very low quiescent power consumption. dc performance of the ampli?r input is characterized by high cmrr (106db), low offset voltage (0.5mv), along with low bias and offset current (5.0na and 2.5na respectively). these input speci?ations, in conjunction with offset null capability and open-loop gain of 300,000v/v, enable HS-2700RH to provide accurate, high-gain signal ampli?ation. gain bandwidth 1mhz and slew rate of 20v/ s allow for processing of fast, wideband signals. input and output signal amplitudes of at least 11v can be accommodated while providing output drive capability of 10ma. for maximum reliability, the output is protected in the event of short circuits to ground. the ampli?r operates from a wide range of supplies ( 5.5v to 20v) with a maximum quiescent supply drain of only 150 a. HS-2700RH is therefore, ideally suited to low-power instrumentation and ?tering applications that require fast, accurate response over a wide range of signal frequency. speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical speci?ations for these devices are contained in smd 5962-95670. a ?ot-link?is provided on our homepage for downloading. www.intersil.com/spacedefense/space.asp features electrically screened to smd # 5962-95670 qml quali?d per mil-prf-38535 requirements low power supply current . . . . . . . . . . . . . . 150 a (max) 90 a (typ) high cmrr . . . . . . . . . . . . . . . . . . . . . . . . . . . 86db (min) 106db (typ) low input bias current . . . . . . . . . . . . . . . . . . . 20na (min) 5na (typ) low offset current . . . . . . . . . . . . . . . . . . . . . . 10na (min) 2.5na (typ) total dose . . . . . . . . . . . . . . . . . . . . . . . . 1 x 10 4 rad(si) applications high gain ampli?r instrumentation ampli?rs active filters telemetry systems battery-powered equipment ordering information ordering number internal mkt. number temp. range ( o c) 5962d9567002vca hs1-2700rh-q -55 to 125 5962d9567002vcc hs1b-2700rh-q -55 to 125 5962d9567002vga hs2-2700rh-q -55 to 125 pinouts hs1-2700rh (cerdip) gdip1-t14 or hs1b-2700rh (sbdip) cdip2-t14 top view hs2-2700rh (can) macy1-x8 top view nc bal guard in- in+ guard v- nc nc bal v+ output nc nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 - + bal out in- v- bal in+ v+ nc 2 4 6 1 3 7 5 8 - + data sheet august 1999
2 test circuit note: includes stray capacitances. timing waveforms figure 1. simplified test circuit figure 2. slew rate waveform figure 3. transient response waveform note: measured on both positive and negative transitions. capacitance at compensation pin should be minimized. s8 s5a 2 1 100 100 +vcc s5b 2 1 + open 1 2k -vee open s9 1 2 75pf (note) acout 1 v2 e out 50k 1 10k s1 + -1 50k v1 s2 s6 1 2 dut s3b 2 open 1 1 0.1 500k buffer for loop stability, use min value capacitor to prevent oscillation open 2 open 2 10k s3a 1 0.1 400 1.6k 1 open 2 all resistors = 1% ( ? ) all capacitors = 10% ( f) -1/10 2 - + - 2 x - vac vin vout 1.6k 75pf 400 + - +1.0v input -4v +2.5v output -2.5v slew rate = ? v/ ? t ? t -1.0v +4v ? v +40mv input 0v overshoot 90% output 10% rise time -40mv 0v 0v +160mv HS-2700RH
3 typical performance curves t a = 25 o c, vsupply = 15v, unless otherwise speci?d figure 4. offset voltage as a function of temperature figure 5. input bias current and offset current as a function of temperature figure 6. bias current as a function of common mode voltage figure 7. bias current as a function of differential input voltage figure 8. power supply current as a function of differential input voltage figure 9. power supply current as a function of temperature 5 4 3 2 1 0 -1 -2 -3 -4 -5 voltage (mv) -55 -25 0 25 50 75 100 125 temperature ( o c) 30 20 10 0 -10 -20 current (ma) -55 -25 0 25 50 75 100 125 temperature ( o c) offset current bias current 500 400 300 200 100 0 -100 -200 -300 -400 -500 bias current (na) -20 -15 -10 -5 0 5 10 15 common mode voltage (v) 20 vs = 15.0v t a = 25 o c 10 9 8 7 6 5 4 3 2 1 0 bias current ( a) 0 5 10 15 20 differential input voltage (v) 25 vs = 15.0v t a = 25 o c 1000 900 800 700 600 500 400 300 200 100 0 power supply current ( a) 0 100 200 300 400 differential input voltage (mv) 500 vs = 15.0v t a = 25 o c 150 120 90 60 30 0 power supply current ( a) -55 -25 0 25 50 temperature ( o c) 125 75 100 vs = 20.0v vs = 15.0v vs = 10.0v vs = 5.5v HS-2700RH
4 figure 10. voltage gain as a function of temperature note: open loop (comparator) applications are not recommended, because of the above characteristic. typical performance curves t a = 25 o c, vsupply = 15v, unless otherwise speci?d (continued) 130 120 110 100 90 80 gain (db) -55 -25 0 25 50 temperature ( o c) 100 75 125 vs = 20.0v vs = 15.0v vs = 10.0v vs = 5.5v burn-in circuits hs1-2700rh cerdip notes: 1. r1 = 1m ? , 5%, 1/4w (min) 2. c1 = c2 = 0.01 f/socket (min) or 0.1 f/row (min) 3. d1 = d2 = 1n4002 or equivalent (per board) 4. |(v+) - (v-)| = 31v 1v hs2-2700rh metal can notes: 5. r1 = 1m ? , 5%, 1/4w (min) 6. c1 = 0.01 f/socket (min) 7. c2 = c3 = 0.01 f/socket (min) or 0.1 f/row (min) 8. d1 = d2 = 1n4002 or equivalent (per board) 9. |(v+) - (v-)| = 31v 1v 10. insulated scope probe must be used during board check-out. nc nc nc r1 nc v- nc nc nc v+ d2 nc nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 c2 d1 c1 r1 v+ d1 c2 d2 c3 - + 3 2 4 7 8 6 v- c1 HS-2700RH
5 irradiation circuit notes: 11. r = 1m ? , 5%, 1/4w 12. v1 = +15v + 1.0v 13. v2 = -15v + 1.0v schematic diagram note: nominal currents shown in microamperes. nc nc nc r1 nc v2 nc nc nc v1 nc nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 gnd in- 3 in+ 2 v+ 4 v- 1 430k ? os- os+ out 6 15 ? 15 ? v+ HS-2700RH
6 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site http://www.intersil.com die characteristics die dimensions: 70 mils x 60 mils x 20 mils (1780 m x 1530 m x 1530 m) interface materials: glassivation: type: nitride thickness: 7k ? 0.7k ? top metallization: type: aluminum thickness: 16k ? 2k ? substrate: linear bipolar, di backside finish: silicon assembly related information: substrate potential (powered up) : unbiased additional information: worst case current density: < 2 x 10 5 a/cm 2 metallization mask layout HS-2700RH bal bal v+ output v- +in -in HS-2700RH
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